Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1MGy capability


Harris, R, Ensell, G J and Brunnschweiler, A (1993) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1MGy capability. , 821-824.

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Item Type: Other
Additional Information: ESSDERC '93 Conference Proceedings of the 23rd European Solid State Device Research Conference, Grenoble, France.
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252810
Date Deposited: 23 Mar 2000
Last Modified: 27 Mar 2014 19:55
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252810

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