Harris, R, Ensell, G J and Brunnschweiler, A (1993) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1MGy capability.
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Published date: September 1993
Additional Information:
ESSDERC '93 Conference Proceedings of the 23rd European Solid State Device Research Conference, Grenoble, France.
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252810
URI: http://eprints.soton.ac.uk/id/eprint/252810
PURE UUID: 2066b253-aaec-4f06-b83b-d7feb56a9e15
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Date deposited: 23 Mar 2000
Last modified: 10 Dec 2021 20:29
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Contributors
Author:
R Harris
Author:
G J Ensell
Author:
A Brunnschweiler
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