Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1MGy capability
Harris, R, Ensell, G J and Brunnschweiler, A (1993) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1MGy capability. , 821-824.
Download
Full text not available from this repository.
| Item Type: | Other |
|---|---|
| Additional Information: | ESSDERC '93 Conference Proceedings of the 23rd European Solid State Device Research Conference, Grenoble, France. |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252810 |
| Date Deposited: | 23 Mar 2000 |
| Last Modified: | 02 Mar 2012 12:38 |
| Contributors: | Harris, R (Author) Ensell, G J (Author) Brunnschweiler, A (Author) |
| Date: | September 1993 |
| Additional Information: | ESSDERC '93 Conference Proceedings of the 23rd European Solid State Device Research Conference, Grenoble, France. |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252810 |
Actions (login required)
 |
View Item |
