Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120 kGy capability
Harris, R, Brunnschweiler, A and Ensell, G J (1994) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120 kGy capability.
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| Item Type: | Other |
|---|---|
| Additional Information: | Eurosensors VIII Conference , Tolouse, France. |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252812 |
| Date Deposited: | 23 Mar 2000 |
| Last Modified: | 02 Mar 2012 13:18 |
| Contributors: | Harris, R (Author) Brunnschweiler, A (Author) Ensell, G J (Author) |
| Date: | September 1994 |
| Additional Information: | Eurosensors VIII Conference , Tolouse, France. |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252812 |
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