Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120 kGy capability


Harris, R, Brunnschweiler, A and Ensell, G J (1994) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120 kGy capability.

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Item Type: Other
Additional Information: Eurosensors VIII Conference , Tolouse, France.
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252812
Date Deposited: 23 Mar 2000
Last Modified: 27 Mar 2014 19:55
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252812

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