The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation.


Bonar, J M and Parker, G J (2000) The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation. , (134), 403 - 406.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252833
Date Deposited: 24 Mar 2000
Last Modified: 27 Mar 2014 19:55
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252833

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