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The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation.

The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation.
The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation.
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d

Bonar, J M and Parker, G J (2000) The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation.

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More information

Published date: 24 March 2000
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252833
URI: http://eprints.soton.ac.uk/id/eprint/252833
PURE UUID: 208385b4-8fa6-4bf2-8edd-ea6acaf85cbb

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Date deposited: 24 Mar 2000
Last modified: 29 Jan 2020 15:14

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Contributors

Author: J M Bonar
Author: G J Parker

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