The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation.
Bonar, J M and Parker, G J (2000) The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation. , (134), 403 - 406.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252833 |
| Date Deposited: | 24 Mar 2000 |
| Last Modified: | 01 Mar 2012 10:32 |
| Contributors: | Bonar, J M (Author) Parker, G J (Author) |
| Date: | 24 March 2000 |
| Status: | Unpublished |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252833 |
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