LPCVD SiGe for Heterojunction Bipolar Transistors
Parker, G J, Ashburn, P, Bonar, J M, Gregory, H J, Kennedy, G P and Hamel, J S (1995) LPCVD SiGe for Heterojunction Bipolar Transistors.
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| Item Type: | Other |
|---|---|
| Additional Information: | Organisation: IEE Colloquium on Advanced MOS and Bipolar Devices 14th February 1995, London |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252848 |
| Date Deposited: | 24 Mar 2000 |
| Last Modified: | 02 Mar 2012 13:18 |
| Contributors: | Parker, G J (Author) Ashburn, P (Author) Bonar, J M (Author) Gregory, H J (Author) Kennedy, G P (Author) Hamel, J S (Author) |
| Date: | February 1995 |
| Additional Information: | Organisation: IEE Colloquium on Advanced MOS and Bipolar Devices 14th February 1995, London |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252848 |
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