Regrowth Behaviour of SiGe/Si SDtructures Formed by Ge+ Ion Implantation and Post Amorphisation
Zhang, J R, Wilson, R J, Hemment, P L F, Claverie, A, Cristiano, F, Salles, P, Wen, J Q, Evans, J H, Peaker, A R and Parker, G J (1993) Regrowth Behaviour of SiGe/Si SDtructures Formed by Ge+ Ion Implantation and Post Amorphisation.
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| Item Type: | Other |
|---|---|
| Additional Information: | Organisation: E-MRS 1993 Spring Meeting, Symposium GIV.6. |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252849 |
| Date Deposited: | 24 Mar 2000 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Zhang, J R (Author) Wilson, R J (Author) Hemment, P L F (Author) Claverie, A (Author) Cristiano, F (Author) Salles, P (Author) Wen, J Q (Author) Evans, J H (Author) Peaker, A R (Author) Parker, G J (Author) |
| Date: | 1993 |
| Additional Information: | Organisation: E-MRS 1993 Spring Meeting, Symposium GIV.6. |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252849 |
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