Regrowth Behaviour of SiGe/Si SDtructures Formed by Ge+ Ion Implantation and Post Amorphisation


Zhang, J R, Wilson, R J, Hemment, P L F, Claverie, A, Cristiano, F, Salles, P, Wen, J Q, Evans, J H, Peaker, A R and Parker, G J (1993) Regrowth Behaviour of SiGe/Si SDtructures Formed by Ge+ Ion Implantation and Post Amorphisation.

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Item Type: Other
Additional Information: Organisation: E-MRS 1993 Spring Meeting, Symposium GIV.6.
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252849
Date Deposited: 24 Mar 2000
Last Modified: 27 Mar 2014 19:55
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252849

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