Zhang, J.R., Wilson, R.J., Hemment, P.L.F., Claverie, A., Cristiano, F., Salles, P., Wen, J.Q., Evans, J.H., Peaker, A.R. and Parker, G.J. (1993) Regrowth behaviour of SiGe/Si structures formed by Ge+ Ion implantation and post amorphisation.
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Published date: 1993
Additional Information:
Organisation: E-MRS 1993 Spring Meeting, Symposium GIV.6.
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252849
URI: http://eprints.soton.ac.uk/id/eprint/252849
PURE UUID: 4dd57157-e656-41d2-b750-4a108e7af943
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Date deposited: 24 Mar 2000
Last modified: 10 Dec 2021 20:29
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Contributors
Author:
J.R. Zhang
Author:
R.J. Wilson
Author:
P.L.F. Hemment
Author:
A. Claverie
Author:
F. Cristiano
Author:
P. Salles
Author:
J.Q. Wen
Author:
J.H. Evans
Author:
A.R. Peaker
Author:
G.J. Parker
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