Dopant Profiling of Silicon using Electrochemical Capacitance-Voltage Measurements
Johnston, I R and Parker, G J (1996) Dopant Profiling of Silicon using Electrochemical Capacitance-Voltage Measurements.
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| Item Type: | Other |
|---|---|
| Additional Information: | Organisation: Engineering Materials Post Graduate Conference, Chilworth Manor, Southampton 16 - 17 September 1996 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252855 |
| Date Deposited: | 24 Mar 2000 |
| Last Modified: | 02 Mar 2012 13:40 |
| Contributors: | Johnston, I R (Author) Parker, G J (Author) |
| Date: | September 1996 |
| Additional Information: | Organisation: Engineering Materials Post Graduate Conference, Chilworth Manor, Southampton 16 - 17 September 1996 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252855 |
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