Dopant Profiling of Silicon using Electrochemical Capacitance-Voltage Measurements


Johnston, I R and Parker, G J (1996) Dopant Profiling of Silicon using Electrochemical Capacitance-Voltage Measurements.

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Item Type: Other
Additional Information: Organisation: Engineering Materials Post Graduate Conference, Chilworth Manor, Southampton 16 - 17 September 1996
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252855
Date Deposited: 24 Mar 2000
Last Modified: 27 Mar 2014 19:55
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252855

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