Selective Si and SiGe Epitaxy Growth by LPCVD without the use of Chlorinated Source Gases
Bonar, J M and Parker, G J (1996) Selective Si and SiGe Epitaxy Growth by LPCVD without the use of Chlorinated Source Gases.
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| Item Type: | Other |
|---|---|
| Additional Information: | Organisation: 1996 Spring Meeting of the Materials Research Society San Francisco, CA 8 - 12 April 1996 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252857 |
| Date Deposited: | 24 Mar 2000 |
| Last Modified: | 01 Mar 2012 10:32 |
| Contributors: | Bonar, J M (Author) Parker, G J (Author) |
| Date: | April 1996 |
| Additional Information: | Organisation: 1996 Spring Meeting of the Materials Research Society San Francisco, CA 8 - 12 April 1996 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252857 |
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