Selective Si and SiGe Epitaxy Growth by LPCVD without the use of Chlorinated Source Gases


Bonar, J M and Parker, G J (1996) Selective Si and SiGe Epitaxy Growth by LPCVD without the use of Chlorinated Source Gases.

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Item Type: Other
Additional Information: Organisation: 1996 Spring Meeting of the Materials Research Society San Francisco, CA 8 - 12 April 1996
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252857
Date Deposited: 24 Mar 2000
Last Modified: 27 Mar 2014 19:55
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252857

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