Fabrication of free-standing single-crystal silicon wires

Potts, A, Hasko, D G, Cleaver, J R A and Ahmed, H. (1988) Fabrication of free-standing single-crystal silicon wires. Applied Physics Letters, 52 (10), 834-835.

Abstract

A fabrication process for free-standing single-crystal silicon wires of submicrometer cross-sectional dimensions and lengths in excess of 40 µm is reported. The starting material is silicon-on-insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabricated in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.

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