Fabrication of free-standing single-crystal silicon wires
Potts, A, Hasko, D G, Cleaver, J R A and Ahmed, H. (1988) Fabrication of free-standing single-crystal silicon wires. Applied Physics Letters, 52, (10), 834-835.
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Description/Abstract
A fabrication process for free-standing single-crystal silicon wires of submicrometer cross-sectional dimensions and lengths in excess of 40 µm is reported. The starting material is silicon-on-insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabricated in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.
| Item Type: | Article |
|---|---|
| ISSNs: | 0003-6951 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252878 |
| Date Deposited: | 31 Mar 2000 |
| Last Modified: | 02 Mar 2012 11:38 |
| Contributors: | Potts, A (Author) Hasko, D G (Author) Cleaver, J R A (Author) Ahmed, H. (Author) |
| Date: | March 1988 |
| Status: | Published |
| Publisher: | AMER INST PHYSICS |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252878 |
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