Fabrication of free-standing single-crystal silicon wires
Potts, A, Hasko, D G, Cleaver, J R A and Ahmed, H. (1988) Fabrication of free-standing single-crystal silicon wires. Applied Physics Letters, 52, (10), 834-835.
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A fabrication process for free-standing single-crystal silicon wires of submicrometer cross-sectional dimensions and lengths in excess of 40 µm is reported. The starting material is silicon-on-insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabricated in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||31 Mar 2000|
|Last Modified:||02 Mar 2012 11:38|
|Contributors:||Potts, A (Author)
Hasko, D G (Author)
Cleaver, J R A (Author)
Ahmed, H. (Author)
|Publisher:||AMER INST PHYSICS|
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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