Fabrication of submicrometer free-standing single-crystal gallium arsenide and silicon
Fabrication of submicrometer free-standing single-crystal gallium arsenide and silicon
Freestanding wires of submicrometer width and with lengths up to 40 µm have been fabricated from single-crystal GaAs and Si for studies of quantum transport. Fabrication techniques are described, and the low-temperature properties for semiconductors and metals such as AuPd are compared. Fabrication of three-terminal freestanding metal-semiconductor field effect transistor structures is demonstrated.
1849-1851
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Potts, A
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Cleaver, J R A
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Smith, C G
4be792c6-be81-447a-98cf-d2fd8b800067
Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a
November 1988
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Smith, C G
4be792c6-be81-447a-98cf-d2fd8b800067
Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a
Hasko, D G, Potts, A, Cleaver, J R A, Smith, C G and Ahmed, H
(1988)
Fabrication of submicrometer free-standing single-crystal gallium arsenide and silicon.
Journal of Vacuum Science and Technology B, 6 (6), .
Abstract
Freestanding wires of submicrometer width and with lengths up to 40 µm have been fabricated from single-crystal GaAs and Si for studies of quantum transport. Fabrication techniques are described, and the low-temperature properties for semiconductors and metals such as AuPd are compared. Fabrication of three-terminal freestanding metal-semiconductor field effect transistor structures is demonstrated.
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Published date: November 1988
Additional Information:
This paper was presented at the 32nd meeting of the Symposium on Electron, Ion and Photon Beams in June 1988 (EIPB88) in Fort Lauderdale, Florida USA.
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252879
URI: http://eprints.soton.ac.uk/id/eprint/252879
ISSN: 1071-1023
PURE UUID: b3d02997-515e-463e-bf46-cf9853c84616
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Date deposited: 31 Mar 2000
Last modified: 10 Dec 2021 20:30
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Contributors
Author:
D G Hasko
Author:
A Potts
Author:
J R A Cleaver
Author:
C G Smith
Author:
H Ahmed
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