Thermal transport in free-standing single-crystal GaAs wires


Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C (1990) Thermal transport in free-standing single-crystal GaAs wires. In, Microelectronic Engineering 89, Cambridge , UK, 26 - 28 Sep 1989. Elsevier Science Publishers B. V., 15-18.

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Description/Abstract

Low temperature electrical and magnetoresistance measurements have been performed on free-standing wires of single-crystal n-type GaAs of length 3.2 &#181m and width 0.55 - 0.6 &#181m. In addition, electric field heating experiments have shown that the thermal conductivity, even for doping concentrations as low as 10<SUP>17</SUP> cm<SUP>-3</SUP>, is dominated by the electronic contribution and can be adequately explained by invoking the Wiedemann-Franz law.

Item Type: Conference or Workshop Item (Paper)
Additional Information: This paper was presented in September 1989 at the Microcircuit Engineering Conference (ME89) in Cambridge, UK. Event Dates: 26-28 September 1989
ISBNs: 0444881824
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252882
Date Deposited: 30 Mar 2000
Last Modified: 27 Mar 2014 19:55
Publisher: Elsevier Science Publishers B. V.
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252882

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