Thermal transport in free-standing single-crystal GaAs wires
Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C (1990) Thermal transport in free-standing single-crystal GaAs wires. In, Microelectronic Engineering 89, Cambridge , UK, 26 - 28 Sep 1989. Elsevier Science Publishers B. V., 15-18.
Full text not available from this repository.
Low temperature electrical and magnetoresistance measurements have been performed on free-standing wires of single-crystal n-type GaAs of length 3.2 µm and width 0.55 - 0.6 µm. In addition, electric field heating experiments have shown that the thermal conductivity, even for doping concentrations as low as 10<SUP>17</SUP> cm<SUP>-3</SUP>, is dominated by the electronic contribution and can be adequately explained by invoking the Wiedemann-Franz law.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||This paper was presented in September 1989 at the Microcircuit Engineering Conference (ME89) in Cambridge, UK. Event Dates: 26-28 September 1989|
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||30 Mar 2000|
|Last Modified:||27 Mar 2014 19:55|
|Publisher:||Elsevier Science Publishers B. V.|
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)