Lattice heating of freestanding ultra-fine GaAs wires by hot-electrons
Potts, A, Kelly, M J, Hasko, D G, Cleaver, J R A, Ahmed, H, Ritchie, D A, Frost, J E F and Jones, G A C (1992) Lattice heating of freestanding ultra-fine GaAs wires by hot-electrons. Semiconductor Science and Technology, 7, (3B), B231-B234.
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We extend our previous studies of the heating by DC electric fields of submicron-diameter free-standing wires of doped GaAs at low lattice temperatures. For lower fields, equivalent to sub-nanowatt dissipated power in our samples, all thermal processes could be accounted for in terms of electron heating alone. We consider here the regime where the hot electrons deposit some of their excess energy into the host lattice, we extract a characteristic electron-phonon scattering length that is an appreciable fraction of the sample length, and we provide evidence for ballistic transport.
|Additional Information:||Paper presented at the 7th International Conference on Hot Carriers in Semiconductors, Nara, Japan (July 01-05 1991)|
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||23 Mar 2006|
|Last Modified:||27 Mar 2014 19:55|
|Publisher:||Institute of Physics Publishing Ltd.|
|Further Information:||Google Scholar|
|ISI Citation Count:||8|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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