Quasi-one dimensional transport in semiconductor microstructures


Kelly, M J, Potts, A, Hamilton, A, Tewordt, M, Pepper, M, Law, V J, Frost, J E F, Ritchie, D A, Jones, G A C, Hasko, D G and Ahmed, H (1992) Quasi-one dimensional transport in semiconductor microstructures. Physica Scripta, T45, 200-205.

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Description/Abstract

We describe some of the physics peculiar to electron transport in quasi-one-dimensional systems in semiconductors, with particular reference to three systems in which it has been investigated: ultra-fine free-standing wires of doped GaAs, the split-gate high-electron-mobility transistor (with and without a back-gate to vary the carrier concentration), and vertical quantum pillars fabricated from multiple-barrier heterostructure material. They are all electron waveguide structures, characterised by < 0.1 µm feature sizes in two of the three spatial dimensions, and they all exhibit phenomena quite different from those seen in macroscopic semiconductor structures. We try to identify the subset of this physics that may be exploitable, and comment on the more general relevance of this new physics to devices.

Item Type: Article
Additional Information: This was an invited paper presented at the 12th General Conference of the Condensed Matter Division of the European Physical Society. PRAGUE, CZECHOSLOVAKIA, APR 06-09, 1992 Event Dates: April 06-09, 1992
ISSNs: 0281-1847
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252889
Date Deposited: 23 Mar 2006
Last Modified: 27 Mar 2014 19:55
Publisher: Royal Swedish Academy of Sciences
Further Information:Google Scholar
ISI Citation Count:0
URI: http://eprints.soton.ac.uk/id/eprint/252889

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