A multi bit modulator in floating body silicon-on-sapphire for extreme radiation environments


Edwards, C F, Redman-White, W, Bracey, M, Tenbroek, B M, Lee, M S and Uren, M J (1999) A multi bit modulator in floating body silicon-on-sapphire for extreme radiation environments. In, Meeting, The Hague, Netherlands, 22 - 24 Sep 1998. IEEE EDS, 937-948.

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Description/Abstract

This paper presents the design of an experimental first-order modulator with 4 quantization, fabricated in a 1.5-um space-qualified radiation-hard partially depleted sapphire (SOS) digital CMOS process. This converter architecture has been chosen investigation into the design of a range of common analog functions with two key one of technology and one environmental. First, both the architecture and the circ optimized using a variety of unconventional techniques to account for the influence bias-dependent, radiation-induced threshold-voltage shifts of up to 1V, as well as noise. Second, the circuitry is specially adapted to accommodate the floating-body type of process, wherein drain conductance varies considerably with drain bias and design techniques are directly applicable to very large-scale-integration silicon-on-design, where similar device phsics are encountered. Notwithstanding the severe the design, the fabricated circuit provides 9.7 bits of dynamic range in a 63-kHz si only degrading to 9.1 bits after 23 Mrad(Si) of total dose radiation.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Event Dates: 22-24 September 1998 Organisation: Proc European Solid State Circuits Conference, The Hague, The Netherlands
ISSNs: 0018-9200
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 252991
Date Deposited: 09 Sep 2004
Last Modified: 02 Mar 2012 14:03
Contributors: Edwards, C F (Author)
Redman-White, W (Author)
Bracey, M (Author)
Tenbroek, B M (Author)
Lee, M S (Author)
Uren, M J (Author)
Date: September 1999
Additional Information: Event Dates: 22-24 September 1998 Organisation: Proc European Solid State Circuits Conference, The Hague, The Netherlands
Status: Published
Publisher: IEEE EDS
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252991

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