Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters


Tenbroek, B M, Lee, M S L, Redman-White, W, Bunyan, R J T and Uren, M J (1997) Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters. UNSPECIFIED

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Organisation: IEEE Silicon on Insulator Conference, California, USA
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 252994
Date Deposited: 19 Apr 2000
Last Modified: 02 Mar 2012 12:58
Contributors: Tenbroek, B M (Author)
Lee, M S L (Author)
Redman-White, W (Author)
Bunyan, R J T (Author)
Uren, M J (Author)
Date: October 1997
Additional Information: Organisation: IEEE Silicon on Insulator Conference, California, USA
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252994

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