Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction


Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J (1995) Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction. UNSPECIFIED

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Organisation: Proc IEEE International SOI Conference, Tucson, AZ, USA
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 253003
Accepted Date and Publication Date:
Status
October 1995Published
Date Deposited: 19 Apr 2000
Last Modified: 31 Mar 2016 13:53
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/253003

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