Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction


Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J (1995) Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction. UNSPECIFIED

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Organisation: Proc IEEE International SOI Conference, Tucson, AZ, USA
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 253003
Date Deposited: 19 Apr 2000
Last Modified: 27 Mar 2014 19:55
Further Information:Google Scholar
ISI Citation Count:0
URI: http://eprints.soton.ac.uk/id/eprint/253003

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