Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction
Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J (1995) Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction. UNSPECIFIED
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Additional Information: | Organisation: Proc IEEE International SOI Conference, Tucson, AZ, USA |
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 253003 |
| Date Deposited: | 19 Apr 2000 |
| Last Modified: | 02 Mar 2012 13:41 |
| Contributors: | Tenbroek, B M (Author) Redman-White, W (Author) Lee, M S L (Author) Uren, M J (Author) |
| Date: | October 1995 |
| Additional Information: | Organisation: Proc IEEE International SOI Conference, Tucson, AZ, USA |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/253003 |
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