Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance
Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J (1995) Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance. UNSPECIFIED
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Additional Information: | Organisation: Proc European Solid State Device Research Conference, The Hague, The Netherlands |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 253006 |
| Date Deposited: | 19 Apr 2000 |
| Last Modified: | 02 Mar 2012 12:39 |
| Contributors: | Tenbroek, B M (Author) Redman-White, W (Author) Lee, M S L (Author) Uren, M J (Author) |
| Date: | September 1995 |
| Additional Information: | Organisation: Proc European Solid State Device Research Conference, The Hague, The Netherlands |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/253006 |
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