Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance


Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J (1995) Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance. UNSPECIFIED

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Organisation: Proc European Solid State Device Research Conference, The Hague, The Netherlands
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 253006
Date Deposited: 19 Apr 2000
Last Modified: 27 Mar 2014 19:55
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/253006

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