Frequency dependent small-signal drain characteristics in silcon-on-sapphire MOSFETs
Howes, R and Redman-White, W (1991) Frequency dependent small-signal drain characteristics in silcon-on-sapphire MOSFETs. UNSPECIFIED
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Additional Information: | Organisation: Proc European Solid State Device Research Conference, Montreaux, Switzerland |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 253258 |
| Date Deposited: | 09 May 2000 |
| Last Modified: | 02 Mar 2012 11:39 |
| Contributors: | Howes, R (Author) Redman-White, W (Author) |
| Date: | September 1991 |
| Additional Information: | Organisation: Proc European Solid State Device Research Conference, Montreaux, Switzerland |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/253258 |
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