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Modelling and simulation of silicon on Sapphire MOSFETs for analogue circuit design

Modelling and simulation of silicon on Sapphire MOSFETs for analogue circuit design
Modelling and simulation of silicon on Sapphire MOSFETs for analogue circuit design
Howes, R
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Redman-White, W
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Nicols, K G
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Murray, S J
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Mole, P J
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Howes, R
e00663fa-4ea2-4ae1-bff5-4ac9078f492f
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Nicols, K G
f4e97461-eeba-42d8-84ff-9b7a3ad78045
Murray, S J
232f7a01-7244-42a5-831f-fe4222515ea8
Mole, P J
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Howes, R, Redman-White, W, Nicols, K G, Murray, S J and Mole, P J (1990) Modelling and simulation of silicon on Sapphire MOSFETs for analogue circuit design.

Record type: Conference or Workshop Item (Other)

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More information

Published date: September 1990
Additional Information: Organisation: European Solid State Device Research Conference, Nottingham
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 253265
URI: http://eprints.soton.ac.uk/id/eprint/253265
PURE UUID: c8fb6736-4dcc-4cc0-8570-d904b125925d

Catalogue record

Date deposited: 05 May 2000
Last modified: 10 Dec 2021 20:32

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Contributors

Author: R Howes
Author: W Redman-White
Author: K G Nicols
Author: S J Murray
Author: P J Mole

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