Modelling and characterisation of noise of polysilicon emitter bipolar transistors
Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Modelling and characterisation of noise of polysilicon emitter bipolar transistors. UNSPECIFIED
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Additional Information: | Organisation: IEEE Bipolar Circuits and Technology Meeting, Minneapolis, USA |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 253267 |
| Date Deposited: | 09 May 2000 |
| Last Modified: | 02 Mar 2012 12:20 |
| Contributors: | Siabi-Shahrivar, N (Author) Redman-White, W (Author) Ashburn, P (Author) Post, I (Author) |
| Date: | September 1990 |
| Additional Information: | Organisation: IEEE Bipolar Circuits and Technology Meeting, Minneapolis, USA |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/253267 |
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