The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages
Edwards, C. F., Redman-White, W., Tenbroek, B. M., Lee, M. S. L. and Uren, M. J. (1997) The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages. IEEE Transactions on Electron Devices, 44, (12), 2290-2294.
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This paper examines some implications for analogue design of using body ties as a solution to the problem of floating body effects in partially-depleted (PD) SOI technologies. Measurements on H-gate body-tied structures in a 0.7-um SOI process indicate body-tie series resistances increasing into the M region. Both circuit simulation and measurement results reveal a delayed but sharper kink effect as this resistance increases. The consequences of this effect are shown in the context of a simple amplifier configuration, resulting in severe bias-dependent degradation in the small signal gain characteriestics as the body-tie resistance enters the M region. It is deduced that imperfectly body tied devices may be worse for analogue design than using non body-tie at all.
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||09 Sep 2004|
|Last Modified:||02 Mar 2012 12:39|
|Contributors:||Edwards, C. F. (Author)
Redman-White, W. (Author)
Tenbroek, B. M. (Author)
Lee, M. S. L. (Author)
Uren, M. J. (Author)
|Further Information:||Google Scholar|
|ISI Citation Count:||9|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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