The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages

Edwards, C. F., Redman-White, W., Tenbroek, B. M., Lee, M. S. L. and Uren, M. J. (1997) The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages. IEEE Transactions on Electron Devices, 44, (12), 2290-2294.


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This paper examines some implications for analogue design of using body ties as a solution to the problem of floating body effects in partially-depleted (PD) SOI technologies. Measurements on H-gate body-tied structures in a 0.7-um SOI process indicate body-tie series resistances increasing into the M region. Both circuit simulation and measurement results reveal a delayed but sharper kink effect as this resistance increases. The consequences of this effect are shown in the context of a simple amplifier configuration, resulting in severe bias-dependent degradation in the small signal gain characteriestics as the body-tie resistance enters the M region. It is deduced that imperfectly body tied devices may be worse for analogue design than using non body-tie at all.

Item Type: Article
ISSNs: 0018-9383
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 253303
Accepted Date and Publication Date:
December 1997Published
Date Deposited: 09 Sep 2004
Last Modified: 31 Mar 2016 13:54
Further Information:Google Scholar

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