The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages
Edwards, C. F., Redman-White, W., Tenbroek, B. M., Lee, M. S. L. and Uren, M. J. (1997) The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages. IEEE Transactions on Electron Devices, 44, (12), 2290-2294.
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Description/Abstract
This paper examines some implications for analogue design of using body ties as a solution to the problem of floating body effects in partially-depleted (PD) SOI technologies. Measurements on H-gate body-tied structures in a 0.7-um SOI process indicate body-tie series resistances increasing into the M region. Both circuit simulation and measurement results reveal a delayed but sharper kink effect as this resistance increases. The consequences of this effect are shown in the context of a simple amplifier configuration, resulting in severe bias-dependent degradation in the small signal gain characteriestics as the body-tie resistance enters the M region. It is deduced that imperfectly body tied devices may be worse for analogue design than using non body-tie at all.
| Item Type: | Article |
|---|---|
| ISSNs: | 0018-9383 |
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 253303 |
| Date Deposited: | 09 Sep 2004 |
| Last Modified: | 02 Mar 2012 12:39 |
| Contributors: | Edwards, C. F. (Author) Redman-White, W. (Author) Tenbroek, B. M. (Author) Lee, M. S. L. (Author) Uren, M. J. (Author) |
| Date: | December 1997 |
| Status: | Published |
| Publisher: | IEEE EDS |
| Further Information: | Google Scholar |
| ISI Citation Count: | 9 |
| URI: | http://eprints.soton.ac.uk/id/eprint/253303 |
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