A Novel EEPROM Cell Based on Trench Technology for Integration Within Power Integrated Circuits


Garner, D M, Chen, Y, Sabesan, L, Amaratunga, G A J, Blackburn, A, Clark, J, Sekiariapuram, S S and Evans, A G R (2000) A Novel EEPROM Cell Based on Trench Technology for Integration Within Power Integrated Circuits. IEE Electron Device Letters, 21, 236-238.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
Item ID: 253448
Date Deposited: 25 Aug 2004
Last Modified: 14 Aug 2012 01:33
Contributors: Garner, D M (Author)
Chen, Y (Author)
Sabesan, L (Author)
Amaratunga, G A J (Author)
Blackburn, A (Author)
Clark, J (Author)
Sekiariapuram, S S (Author)
Evans, A G R (Author)
Date: May 2000
Status: Published
Further Information:Google Scholar
ISI Citation Count:0
URI: http://eprints.soton.ac.uk/id/eprint/253448

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