Activation energy for fluorine transport in amorphous silicon
Nash, G.R., Schiz, J.F.W., Marsh, C.D., Ashburn, P. and Booker, G.R. (1999) Activation energy for fluorine transport in amorphous silicon. Applied Physics Letters, 75, (23), 3671-3673.
The transport of ion implanted F in amorphous Si is studied using secondary ion mass spectroscopy and transmission electron microscopy. Significant redistribution of F is observed at temperatures in the range 600°C to 700°C. The measured F depth-profiles are modelled using a simple Gaussian solution to the diffusion equation, and the diffusion coefficient is deduced at each temperature. An activation energy of 2.2eV±0.4eV for F transport is extracted from an Arrhenius plot of the diffusion coefficients. It is shown that the F transport is influenced by implantation induced defects.
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||06 Jan 2004|
|Last Modified:||02 Mar 2012 12:39|
|Contributors:||Nash, G.R. (Author)
Schiz, J.F.W. (Author)
Marsh, C.D. (Author)
Ashburn, P. (Author)
Booker, G.R. (Author)
|Further Information:||Google Scholar|
|ISI Citation Count:||19|
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