A silicon on sapphire MOSFET based on the calculation of surface potential
Howes, R, Redman-White, Q, Nichols, K G, Robinson, M, bird, S and Mole, P J (1994) A silicon on sapphire MOSFET based on the calculation of surface potential. IEE Trans Computer Aided Design of Integrated Circuits, 13, (4), 494 - 506.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 253751 |
| Date Deposited: | 07 Aug 2000 |
| Last Modified: | 01 Mar 2012 10:38 |
| Contributors: | Howes, R (Author) Redman-White, Q (Author) Nichols, K G (Author) Robinson, M (Author) bird, S (Author) Mole, P J (Author) |
| Date: | March 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/253751 |
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