A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs
Howes, R and Redman-?White, W (1992) A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs. IEEE Journal of Solid State Circuits, 27, (8), 1186 - 1193.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 253756 |
| Date Deposited: | 07 Aug 2000 |
| Last Modified: | 02 Mar 2012 12:59 |
| Contributors: | Howes, R (Author) Redman-?White, W (Author) |
| Date: | August 1992 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 23 |
| URI: | http://eprints.soton.ac.uk/id/eprint/253756 |
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