A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs


Howes, R. and Redman-White, W. (1992) A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs. IEEE Journal of Solid State Circuits, 27, (8), 1186 - 1193.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 253756
Date Deposited: 07 Aug 2000
Last Modified: 30 Dec 2015 22:26
Further Information:Google Scholar
ISI Citation Count:23
URI: http://eprints.soton.ac.uk/id/eprint/253756

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