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Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI)

Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI)
Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI)
Experimental s21 transmission cross-talk studies have been conducted on silicon-on-insulator substrates with buried ground planes (GPSOI) where a 2 Ù per square metal-silicide buried ground plane existed between a 15 Ù cm p-type silicon substrate and a 1 ìm thick buried CVD oxide layer. Transmission structures fabricated on GPSOI, where the ground plane was locally grounded electrically, exhibited 50 dB to 30 dB increased isolation over a frequency range of 500 MHz to 50 GHz compared to standard low resistivity (15 to 20 Ù cm ) SOI substrates where no buried ground plane existed. The GPSOI exhibited over 25 dB increased isolation over the same frequency range compared to published data for high resistivity (200 Ù cm ) SOI substrates with no buried ground plane but where capacitive guard rings were used. substrate,crosstalk,isolation
134-135
Hamel, J.S.
5a4f240e-515d-4546-874c-02fa309d7f75
Stefanou, S.
7b5a0fad-726d-4ab5-affb-8d765f83517c
Baine, P.
3476f59f-9f6f-499c-bec2-f833e49217b4
Bain, M.
d1f75ae2-c2c8-42c2-908e-5f3b394b4cf3
Armstrong, B.M.
ebaa1599-84a6-462e-a196-0d99e0f353d7
Gamble, H.S.
9b174953-4dfa-4921-bd4b-205951e6d21d
Hamel, J.S.
5a4f240e-515d-4546-874c-02fa309d7f75
Stefanou, S.
7b5a0fad-726d-4ab5-affb-8d765f83517c
Baine, P.
3476f59f-9f6f-499c-bec2-f833e49217b4
Bain, M.
d1f75ae2-c2c8-42c2-908e-5f3b394b4cf3
Armstrong, B.M.
ebaa1599-84a6-462e-a196-0d99e0f353d7
Gamble, H.S.
9b174953-4dfa-4921-bd4b-205951e6d21d

Hamel, J.S., Stefanou, S., Baine, P., Bain, M., Armstrong, B.M. and Gamble, H.S. (2000) Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI). IEEE Microwave and Guided Wave Letters, 10 (4), 134-135. (doi:10.1109/75.846923).

Record type: Letter

Abstract

Experimental s21 transmission cross-talk studies have been conducted on silicon-on-insulator substrates with buried ground planes (GPSOI) where a 2 Ù per square metal-silicide buried ground plane existed between a 15 Ù cm p-type silicon substrate and a 1 ìm thick buried CVD oxide layer. Transmission structures fabricated on GPSOI, where the ground plane was locally grounded electrically, exhibited 50 dB to 30 dB increased isolation over a frequency range of 500 MHz to 50 GHz compared to standard low resistivity (15 to 20 Ù cm ) SOI substrates where no buried ground plane existed. The GPSOI exhibited over 25 dB increased isolation over the same frequency range compared to published data for high resistivity (200 Ù cm ) SOI substrates with no buried ground plane but where capacitive guard rings were used. substrate,crosstalk,isolation

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More information

Published date: April 2000
Additional Information: Organisation: IEEE
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 254462
URI: http://eprints.soton.ac.uk/id/eprint/254462
PURE UUID: c3919475-5747-450f-839c-4f927bf94c8e

Catalogue record

Date deposited: 29 Mar 2001
Last modified: 17 Mar 2024 07:52

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Contributors

Author: J.S. Hamel
Author: S. Stefanou
Author: P. Baine
Author: M. Bain
Author: B.M. Armstrong
Author: H.S. Gamble

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