Cross-Talk Suppression Capability of Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)
Hamel, J.S., Stefanou, S., Baine, P., Bain, M., Armstrong, B.M. and Gamble, H.S. (2000) Cross-Talk Suppression Capability of Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI). IEEE Microwave and Guided Waves Letters, 10, (4), 134-135.
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Description/Abstract
Experimental s21 transmission cross-talk studies have been conducted on silicon-on-insulator substrates with buried ground planes (GPSOI) where a 2 Ù per square metal-silicide buried ground plane existed between a 15 Ù cm p-type silicon substrate and a 1 ìm thick buried CVD oxide layer. Transmission structures fabricated on GPSOI, where the ground plane was locally grounded electrically, exhibited 50 dB to 30 dB increased isolation over a frequency range of 500 MHz to 50 GHz compared to standard low resistivity (15 to 20 Ù cm ) SOI substrates where no buried ground plane existed. The GPSOI exhibited over 25 dB increased isolation over the same frequency range compared to published data for high resistivity (200 Ù cm ) SOI substrates with no buried ground plane but where capacitive guard rings were used. substrate,crosstalk,isolation
| Item Type: | Other |
|---|---|
| Additional Information: | Organisation: IEEE |
| ISSNs: | 1051-8207 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 254462 |
| Date Deposited: | 29 Mar 2001 |
| Last Modified: | 02 Mar 2012 13:19 |
| Contributors: | Hamel, J.S. (Author) Stefanou, S. (Author) Baine, P. (Author) Bain, M. (Author) Armstrong, B.M. (Author) Gamble, H.S. (Author) |
| Date: | April 2000 |
| Additional Information: | Organisation: IEEE |
| Status: | Published |
| Publisher: | IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/254462 |
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