SiGe heterojunction bipolar transistors on insulator
Ashburn, P., Mubarek, H.A.W.El, Bonar, J.M. and Redman-White, W. (2001) SiGe heterojunction bipolar transistors on insulator. At Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, Washington , USA, Electrochemical Society, 433-444.
Download
Full text not available from this repository.
Description/Abstract
This paper reviews progress in SiGe heterojunction bipolar technology and considers the prospects for SiGe HBT on insulator technology. The three approaches commonly used to produce SiGe HBTs are described and compared, namely the drift SiGe base, the SiGe base with a low doped emitter and the selective SiGe base. Methods for suppressing or avoiding transient enhanced boron diffusion are discussed, especially the use of carbon in the SiGe base. Finally, work on SiGe heterojunction bipolar transistors on SOI at Southampton University is reviewed.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: March 2001 Organisation: Electrochemical Society |
| ISBNs: | 1566773091 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 254722 |
| Date Deposited: | 05 Jan 2004 |
| Last Modified: | 01 Mar 2012 10:42 |
| Contributors: | Ashburn, P. (Author) Mubarek, H.A.W.El (Author) Bonar, J.M. (Author) Redman-White, W. (Author) |
| Date: | March 2001 |
| Additional Information: | Event Dates: March 2001 Organisation: Electrochemical Society |
| Status: | Published |
| Publisher: | Electrochemical Society |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/254722 |
Actions (login required)
 |
View Item |
