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A comparison of pnp and npn SiGe HBTs fabricated by Ge implantation

A comparison of pnp and npn SiGe HBTs fabricated by Ge implantation
A comparison of pnp and npn SiGe HBTs fabricated by Ge implantation
A study is made of npn and pnp SiGe HBTs produced using Ge implantation. The Ge is implanted into a complementary bipolar process after active area definition. Increased collector currents are observed in both npn and pnp transistors due to the presence of the Ge. The implanted Ge has opposing effects on the emitter dopant diffusion: increasing the arsenic diffusion coefficient in the npn devices and decreasing the boron diffusion coefficient in the pnp devices.
248-251
Mitchell, M.
79fd3d5f-d070-4512-b583-2fbdb4519fad
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Graoui, H.
d1fa192c-3cd2-4ede-9de1-b86efec09b9c
Hemment, P.L.F.
198ac06e-1c48-4422-a3a4-de753f22dec3
Lamb, A.
01b3c990-0d50-497c-8046-5cbc630bc28a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Nigrin, S.
b1d7dbaa-8740-40bd-8e16-8370d55948fb
Mitchell, M.
79fd3d5f-d070-4512-b583-2fbdb4519fad
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Graoui, H.
d1fa192c-3cd2-4ede-9de1-b86efec09b9c
Hemment, P.L.F.
198ac06e-1c48-4422-a3a4-de753f22dec3
Lamb, A.
01b3c990-0d50-497c-8046-5cbc630bc28a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Nigrin, S.
b1d7dbaa-8740-40bd-8e16-8370d55948fb

Mitchell, M., Ashburn, P., Graoui, H., Hemment, P.L.F., Lamb, A., Hall, S. and Nigrin, S. (2000) A comparison of pnp and npn SiGe HBTs fabricated by Ge implantation. Proceedings of 30th European Solid State Device Research Conference. pp. 248-251 .

Record type: Conference or Workshop Item (Other)

Abstract

A study is made of npn and pnp SiGe HBTs produced using Ge implantation. The Ge is implanted into a complementary bipolar process after active area definition. Increased collector currents are observed in both npn and pnp transistors due to the presence of the Ge. The implanted Ge has opposing effects on the emitter dopant diffusion: increasing the arsenic diffusion coefficient in the npn devices and decreasing the boron diffusion coefficient in the pnp devices.

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More information

Published date: September 2000
Venue - Dates: Proceedings of 30th European Solid State Device Research Conference, 2000-08-31
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 255698
URI: http://eprints.soton.ac.uk/id/eprint/255698
PURE UUID: b8fb6d82-7fd5-4bed-a6fd-2d56ad8f1727

Catalogue record

Date deposited: 02 Apr 2001
Last modified: 08 Jan 2022 05:42

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Contributors

Author: M. Mitchell
Author: P. Ashburn
Author: H. Graoui
Author: P.L.F. Hemment
Author: A. Lamb
Author: S. Hall
Author: S. Nigrin

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