A comparison of pnp and npn SiGe HBTs fabricated by Ge implantation
Mitchell, M., Ashburn, P., Graoui, H., Hemment, P.L.F., Lamb, A., Hall, S. and Nigrin, S. (2000) A comparison of pnp and npn SiGe HBTs fabricated by Ge implantation. Proceedings of 30th European Solid State Device Research Conference Elsevier, 248-251.
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A study is made of npn and pnp SiGe HBTs produced using Ge implantation. The Ge is implanted into a complementary bipolar process after active area definition. Increased collector currents are observed in both npn and pnp transistors due to the presence of the Ge. The implanted Ge has opposing effects on the emitter dopant diffusion: increasing the arsenic diffusion coefficient in the npn devices and decreasing the boron diffusion coefficient in the pnp devices.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||02 Apr 2001|
|Last Modified:||02 Mar 2012 12:39|
|Contributors:||Mitchell, M. (Author)
Ashburn, P. (Author)
Graoui, H. (Author)
Hemment, P.L.F. (Author)
Lamb, A. (Author)
Hall, S. (Author)
Nigrin, S. (Author)
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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