A Circuit Simulation Model for Silicon-on-Insulator LDMOS Transistors, with accurate Simulation of High Side Behaviour: 1st
D'Halleweyn, N, Swaneneberg, M, Benson, J and Redman-White, W (1999) A Circuit Simulation Model for Silicon-on-Insulator LDMOS Transistors, with accurate Simulation of High Side Behaviour: 1st. In, Device Research Symposium, Washington, USA, Engineering Acadenic Outreach, University of Virginia, 195-199.
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| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | Event Dates: December 1999 Organisation: IEEE |
| ISBNs: | 1880920069 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 255701 |
| Date Deposited: | 03 Sep 2004 |
| Last Modified: | 02 Mar 2012 12:58 |
| Contributors: | D'Halleweyn, N (Author) Swaneneberg, M (Author) Benson, J (Author) Redman-White, W (Author) |
| Date: | December 1999 |
| Additional Information: | Event Dates: December 1999 Organisation: IEEE |
| Status: | Published |
| Publisher: | Engineering Acadenic Outreach, University of Virginia |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/255701 |
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