SiGe CMOS Fabrication using SiGe MBE and Anodic/LTO Gate Oxide
Sidek, R M, Straube, U N, Waite, A M, Evans, A G R, Parry, C, Phillips, P, Whall, T E and Parker, E H C (2000) SiGe CMOS Fabrication using SiGe MBE and Anodic/LTO Gate Oxide. Semiconductor Science and Technology, 15, 135-138.
Download
Full text not available from this repository.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 255771 |
| Date Deposited: | 01 May 2001 |
| Last Modified: | 02 Mar 2012 11:57 |
| Contributors: | Sidek, R M (Author) Straube, U N (Author) Waite, A M (Author) Evans, A G R (Author) Parry, C (Author) Phillips, P (Author) Whall, T E (Author) Parker, E H C (Author) |
| Date: | 2000 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 6 |
| URI: | http://eprints.soton.ac.uk/id/eprint/255771 |
Actions (login required)
 |
View Item |
