SiGe CMOS Fabrication using SiGe MBE and Anodic/LTO Gate Oxide


Sidek, R M, Straube, U N, Waite, A M, Evans, A G R, Parry, C, Phillips, P, Whall, T E and Parker, E H C (2000) SiGe CMOS Fabrication using SiGe MBE and Anodic/LTO Gate Oxide. Semiconductor Science and Technology, 15, 135-138.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 255771
Date Deposited: 01 May 2001
Last Modified: 27 Mar 2014 19:57
Further Information:Google Scholar
ISI Citation Count:6
URI: http://eprints.soton.ac.uk/id/eprint/255771

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