Si/Si0.64Ge0.36/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise


Prest, M. J., Palmer, M. J., Braithwaite, G., Grasby, T. J., Phillips, P. J., Mironov, O. A., Parker, E. H. C., Whall, T. E., Waite, A. M. and Evans, A. G. R. (2001) Si/Si0.64Ge0.36/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise.

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Description/Abstract

Si/Si0.64Fe0.36/Si p MOSFETs with written gate lengths in the range 0.5mu micron to 10mu micron have been fabricated in a reduced thermal budget variant of a standard CMOS process. The devices exhibit enhanced maximum voltage-gains and reduced 1/f noise as compared to silicon controls.

Item Type: Other
Additional Information: Organisation: ESSDERC 2001
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 256168
Date Deposited: 10 Dec 2001
Last Modified: 27 Mar 2014 19:58
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/256168

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