Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
We briefly review recent work on enhancements in transconductance, maximum voltage gain, carrier mobility and velocity overshoot in Si/Si0.64Ge0.36/Si p-channel metal-oxide semiconductor devices and then discuss the superior 1/f noise properties in more detail. The results indicate the growth and processing chanllenges which must be met in order to improve device performance.
Prest, M. J.
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Palmer, M. J.
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Grasby, T. J.
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Phillips, P. J.
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Mironov, O. A.
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Parker, E. H. C.
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Whall, T. E.
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Waite, A. M.
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Evans, A. G. R.
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Watling, J. R.
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Asenov, A.
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Barker, J. R.
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2001
Prest, M. J.
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Palmer, M. J.
de88e9dd-21ac-44d7-ace7-f88000bb3f11
Grasby, T. J.
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Phillips, P. J.
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Mironov, O. A.
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Parker, E. H. C.
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Whall, T. E.
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Waite, A. M.
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Evans, A. G. R.
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Watling, J. R.
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Asenov, A.
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Barker, J. R.
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Prest, M. J., Palmer, M. J., Grasby, T. J., Phillips, P. J., Mironov, O. A., Parker, E. H. C., Whall, T. E., Waite, A. M., Evans, A. G. R., Watling, J. R., Asenov, A. and Barker, J. R.
(2001)
Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs.
Abstract
We briefly review recent work on enhancements in transconductance, maximum voltage gain, carrier mobility and velocity overshoot in Si/Si0.64Ge0.36/Si p-channel metal-oxide semiconductor devices and then discuss the superior 1/f noise properties in more detail. The results indicate the growth and processing chanllenges which must be met in order to improve device performance.
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Published date: 2001
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 256169
URI: http://eprints.soton.ac.uk/id/eprint/256169
PURE UUID: 8301991c-2377-4323-ab83-356ee3f9c16a
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Date deposited: 14 Oct 2004
Last modified: 10 Dec 2021 20:42
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Contributors
Author:
M. J. Prest
Author:
M. J. Palmer
Author:
T. J. Grasby
Author:
P. J. Phillips
Author:
O. A. Mironov
Author:
E. H. C. Parker
Author:
T. E. Whall
Author:
A. M. Waite
Author:
A. G. R. Evans
Author:
J. R. Watling
Author:
A. Asenov
Author:
J. R. Barker
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