Technical Note on the Mobility Extraction for HMOSFETs


Straube, U. N., Evans, A. G. R., Braithwaite, G., Kaya, S., Watling, J. and Asenov, A. (2001) Technical Note on the Mobility Extraction for HMOSFETs. Solid-State Electronics, 45

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Description/Abstract

Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential.

Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 256173
Date Deposited: 11 Dec 2001
Last Modified: 27 Mar 2014 19:58
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/256173

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