Technical Note on the Mobility Extraction for HMOSFETs
Straube, U. N., Evans, A. G. R., Braithwaite, G., Kaya, S., Watling, J. and Asenov, A. (2001) Technical Note on the Mobility Extraction for HMOSFETs. Solid-State Electronics, 45
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Description/Abstract
Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential.
| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 256173 |
| Date Deposited: | 11 Dec 2001 |
| Last Modified: | 02 Mar 2012 13:18 |
| Contributors: | Straube, U. N. (Author) Evans, A. G. R. (Author) Braithwaite, G. (Author) Kaya, S. (Author) Watling, J. (Author) Asenov, A. (Author) |
| Date: | 2001 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/256173 |
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