Enhanced Velocity Overshoot and Transconductance in Si/Si 0.64 Ge 0.36/Si pMOSFETs - Predictions for Deep Submicron Devices
Palmer, M. J., Braithwaite, G., Prest, M. J., Parker, E.H.C., Whall, T. E., Zhao, Y. P., Kaya, S., Watling, J. R., Asenov, A., Barker, J. R., Waite, A. M. and Evans, A.G.R. (2001) Enhanced Velocity Overshoot and Transconductance in Si/Si 0.64 Ge 0.36/Si pMOSFETs - Predictions for Deep Submicron Devices.
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Electrical measurements have been carried out on Si/Si 0.64 Ge 0.36/Si pMOS devices and it is demonstrated that enhanced low field carrier mobilities lead to concomitant and substantial enhancements in velocity overshoot and transconductance at deep submicron channel lengths. This provides considerable motivation for incorporating SiGe into Si MOS technology.
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||11 Dec 2001|
|Last Modified:||02 Mar 2012 12:57|
|Contributors:||Palmer, M. J. (Author)
Braithwaite, G. (Author)
Prest, M. J. (Author)
Parker, E.H.C. (Author)
Whall, T. E. (Author)
Zhao, Y. P. (Author)
Kaya, S. (Author)
Watling, J. R. (Author)
Asenov, A. (Author)
Barker, J. R. (Author)
Waite, A. M. (Author)
Evans, A.G.R. (Author)
|Further Information:||Google Scholar|
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