A Circuit Simulation Model for SOI LDMOS transistors, with accurate High-Side Behaviour
D'Halleweyn, N., Swanenberg, M., Benson, J. and Redman-White, W. (1999) A Circuit Simulation Model for SOI LDMOS transistors, with accurate High-Side Behaviour. Proceedings of the ISDRS , 195-199.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 256308 |
| Date Deposited: | 07 Feb 2002 |
| Last Modified: | 02 Mar 2012 13:18 |
| Contributors: | D'Halleweyn, N. (Author) Swanenberg, M. (Author) Benson, J. (Author) Redman-White, W. (Author) |
| Date: | 1999 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/256308 |
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