The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films
Anteney, I.M., Parker, G.J., Ashburn, P. and Kemhadjian, H.A. (2001) The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films. Journal of Applied Physics, 90, (12), 6182-6189.
A comparison is made of the electrical effects of carbon in n and p type in situ doped polycrystalline Si1-yCy and Si0.82-ySi0.18Cy layers. Values of resistivity as a function of temperature, effective carrier concentration and Hall mobility are reported.
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||22 Dec 2003|
|Last Modified:||07 Mar 2012 17:46|
|Contributors:||Anteney, I.M. (Author)
Parker, G.J. (Author)
Ashburn, P. (Author)
Kemhadjian, H.A. (Author)
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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