The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films


Anteney, I.M., Parker, G.J., Ashburn, P. and Kemhadjian, H.A. (2001) The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films. Journal of Applied Physics, 90, (12), 6182-6189.

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Description/Abstract

A comparison is made of the electrical effects of carbon in n and p type in situ doped polycrystalline Si1-yCy and Si0.82-ySi0.18Cy layers. Values of resistivity as a function of temperature, effective carrier concentration and Hall mobility are reported.

Item Type: Article
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 256473
Date Deposited: 22 Dec 2003
Last Modified: 07 Mar 2012 17:46
Contributors: Anteney, I.M. (Author)
Parker, G.J. (Author)
Ashburn, P. (Author)
Kemhadjian, H.A. (Author)
Date: December 2001
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/256473

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