Reed, G.T., Png, C.E., Masanovic, G., Chan, S, Lim, S.T., Vonsovici, A., Evans, A.G.R., Atta, R, Jackson, S M, Way, A S and Kewell, A K
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Silicon Carbide is a potentially useful compound for use in silicon based photonics because cubic silicon carbide (3C-SiC) possesses a first order electro-optic (Pockels) effect, something absent is pure silicon. This means the material is potentially suitable for high speed optical modulation. Furthermore, the wide bandgap (2.2eV) of 3C-SiC makes the devices suitable for use over the visible and near infrared spectrum range as well as the longer communication wavelengths, and also means the material can tolerate high temperatures. However, relatively little work has been carried out in SiC waveguides and modulators for silicon based photonics. The fabrication process utilises ion implantation of oxygen into SiC to form the lower waveguide boundary. Subsequently ribs are etched and contacts are added to form the optical modulators. Consideration of both Pockels modulators and plasma dispersion modulators have been made, and both will be discussed here. These devices have potential for optical modulation, but are also compatible with silicon processing technology
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