Other #256485
Straube, U.N., Waite, A.M., Evans, A.G.R., Nejim, A. and Hemment, P.L.F. (2001) UNSPECIFIED Electronics Letters, 37, (25)
Download
Full text not available from this repository.
Description/Abstract
SiGe heterostructure MOSFETS have the potential for improved channel mobility over Si only devices. It is shown that fabrication by implantation leads to inferior devices in contrast to previously reported work. A simultaneous decrease of the drain current and increase of the interface state density has been observed
| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 256485 |
| Date Deposited: | 05 Apr 2002 |
| Last Modified: | 02 Mar 2012 12:39 |
| Contributors: | Straube, U.N. (Author) Waite, A.M. (Author) Evans, A.G.R. (Author) Nejim, A. (Author) Hemment, P.L.F. (Author) |
| Date: | December 2001 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/256485 |
Actions (login required)
 |
View Item |
