Straube, U.N., Waite, A.M., Evans, A.G.R., Nejim, A. and Hemment, P.L.F.
Electronics Letters, 37, (25)
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SiGe heterostructure MOSFETS have the potential for improved channel mobility over Si only devices. It is shown that fabrication by implantation leads to inferior devices in contrast to previously reported work. A simultaneous decrease of the drain current and increase of the interface state density has been observed
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