Adverse effect of Ge+ implantation for fabrication of SiGe PMOS


Straube, U.N., Waite, A.M., Evans, A.G.R., Nejim, A. and Hemment, P.L.F. (2001) Adverse effect of Ge+ implantation for fabrication of SiGe PMOS. Electronics Letters, 37, (25)

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Description/Abstract

SiGe heterostructure MOSFETS have the potential for improved channel mobility over Si only devices. It is shown that fabrication by implantation leads to inferior devices in contrast to previously reported work. A simultaneous decrease of the drain current and increase of the interface state density has been observed

Item Type: Article
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 256485
Accepted Date and Publication Date:
Status
December 2001Published
Date Deposited: 05 Apr 2002
Last Modified: 20 May 2016 14:17
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/256485

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