Other #256485

Straube, U.N., Waite, A.M., Evans, A.G.R., Nejim, A. and Hemment, P.L.F. (2001) UNSPECIFIED Electronics Letters, 37, (25)


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SiGe heterostructure MOSFETS have the potential for improved channel mobility over Si only devices. It is shown that fabrication by implantation leads to inferior devices in contrast to previously reported work. A simultaneous decrease of the drain current and increase of the interface state density has been observed

Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 256485
Date Deposited: 05 Apr 2002
Last Modified: 27 Mar 2014 19:58
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/256485

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