Adverse effect of Ge+ implantation for fabrication of SiGe PMOS
Adverse effect of Ge+ implantation for fabrication of SiGe PMOS
SiGe heterostructure MOSFETS have the potential for improved channel mobility over Si only devices. It is shown that fabrication by implantation leads to inferior devices in contrast to previously reported work. A simultaneous decrease of the drain current and increase of the interface state density has been observed
Straube, U.N.
91ee9558-9176-426f-a842-1ffaca55292a
Waite, A.M.
3badd40f-fa77-443f-8c8c-baede8a20dbd
Evans, A.G.R.
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Nejim, A.
844d60f1-e438-4ffe-a309-47245b9000f0
Hemment, P.L.F.
198ac06e-1c48-4422-a3a4-de753f22dec3
December 2001
Straube, U.N.
91ee9558-9176-426f-a842-1ffaca55292a
Waite, A.M.
3badd40f-fa77-443f-8c8c-baede8a20dbd
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Nejim, A.
844d60f1-e438-4ffe-a309-47245b9000f0
Hemment, P.L.F.
198ac06e-1c48-4422-a3a4-de753f22dec3
Straube, U.N., Waite, A.M., Evans, A.G.R., Nejim, A. and Hemment, P.L.F.
(2001)
Adverse effect of Ge+ implantation for fabrication of SiGe PMOS.
Electronics Letters, 37 (25).
Abstract
SiGe heterostructure MOSFETS have the potential for improved channel mobility over Si only devices. It is shown that fabrication by implantation leads to inferior devices in contrast to previously reported work. A simultaneous decrease of the drain current and increase of the interface state density has been observed
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Published date: December 2001
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 256485
URI: http://eprints.soton.ac.uk/id/eprint/256485
ISSN: 0013-5194
PURE UUID: 6cf3ce47-68da-408e-acad-5dd3f54f6dca
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Date deposited: 05 Apr 2002
Last modified: 08 Jan 2022 02:39
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Contributors
Author:
U.N. Straube
Author:
A.M. Waite
Author:
A.G.R. Evans
Author:
A. Nejim
Author:
P.L.F. Hemment
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