Room-temperature polariton lasers based on GaN microcavities
Malpuech, Guillaume, Di Carlo, Aldo, Kavokin, Alexey, Baumberg, Jeremy J., Zamfirescu, Marian and Lugli, Paolo (2002) Room-temperature polariton lasers based on GaN microcavities. APPLIED PHYSICS LETTERS, 81, (3), 412-414.
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Description/Abstract
The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T5460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers.
| Item Type: | Article |
|---|---|
| Related URLs: | |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 256685 |
| Date Deposited: | 18 Jul 2002 |
| Last Modified: | 16 Aug 2012 03:12 |
| Contributors: | Malpuech, Guillaume (Author) Di Carlo, Aldo (Author) Kavokin, Alexey (Author) Baumberg, Jeremy J. (Author) Zamfirescu, Marian (Author) Lugli, Paolo (Author) |
| Date: | July 2002 |
| Status: | Published |
| Publisher: | American Institute of Physics |
| Further Information: | Google Scholar |
| ISI Citation Count: | 124 |
| URI: | http://eprints.soton.ac.uk/id/eprint/256685 |
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