Malpuech, Guillaume, Di Carlo, Aldo, Kavokin, Alexey, Baumberg, Jeremy J., Zamfirescu, Marian and Lugli, Paolo
Room-temperature polariton lasers based on GaN microcavities.
APPLIED PHYSICS LETTERS, 81, (3), .
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The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T5460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers.
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Room-temperature polariton lasers based on GaN microcavities. (deposited 18 Jul 2002)
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