Room-temperature polariton lasers based on GaN microcavities

Malpuech, Guillaume, Di Carlo, Aldo, Kavokin, Alexey, Baumberg, Jeremy J., Zamfirescu, Marian and Lugli, Paolo (2002) Room-temperature polariton lasers based on GaN microcavities. APPLIED PHYSICS LETTERS, 81, (3), 412-414.

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The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T5460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers.

Item Type: Article
Related URLs:
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 256685
Accepted Date and Publication Date:
July 2002Published
Date Deposited: 18 Jul 2002
Last Modified: 27 Mar 2014 19:58
Further Information:Google Scholar

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