Polariton lasing by exciton-electron scattering in semiconductor microcavities

Malpuech, G, Kavokin, A, Di Carlo, A and Baumberg, J.J. (2002) Polariton lasing by exciton-electron scattering in semiconductor microcavities. PHYSICAL REVIEW B,, 65, (153310), 153310-1.


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The relaxation bottleneck present in the dispersion relation of exciton polaritons in semiconductor microcavities has prevented the realization of low threshold lasing based on exciton-polariton condensation. Here we show theoretically that the introduction of a cold electron gas into such structures induces efficient electronpolariton scattering. This process allows the condensation of the polaritons accumulated at the bottleneck to the final emitting state with a transition time of a few picoseconds, opening the way to a new generation of low-threshold light-emitting devices.

Item Type: Article
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 256689
Accepted Date and Publication Date:
April 2002Published
Date Deposited: 18 Jul 2002
Last Modified: 27 Mar 2014 19:58
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/256689

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