Polariton lasing by exciton-electron scattering in semiconductor microcavities
Malpuech, G, Kavokin, A, Di Carlo, A and Baumberg, J.J. (2002) Polariton lasing by exciton-electron scattering in semiconductor microcavities. PHYSICAL REVIEW B,, 65, (153310), 153310-1.
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Description/Abstract
The relaxation bottleneck present in the dispersion relation of exciton polaritons in semiconductor microcavities has prevented the realization of low threshold lasing based on exciton-polariton condensation. Here we show theoretically that the introduction of a cold electron gas into such structures induces efficient electronpolariton scattering. This process allows the condensation of the polaritons accumulated at the bottleneck to the final emitting state with a transition time of a few picoseconds, opening the way to a new generation of low-threshold light-emitting devices.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 256689 |
| Date Deposited: | 18 Jul 2002 |
| Last Modified: | 02 Mar 2012 12:58 |
| Contributors: | Malpuech, G (Author) Kavokin, A (Author) Di Carlo, A (Author) Baumberg, J.J. (Author) |
| Date: | April 2002 |
| Status: | Published |
| Publisher: | The American Physical Society |
| Further Information: | Google Scholar |
| ISI Citation Count: | 103 |
| URI: | http://eprints.soton.ac.uk/id/eprint/256689 |
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