Gateable Suppression of Spin Relaxation in Semiconductors
Sandhu, J.S., Heberle, A.P., Baumberg, J.J. and Cleaver, J.R.A. (2001) Gateable Suppression of Spin Relaxation in Semiconductors. PHYSICAL REVIEW LETTERS, 86, (10), 2150-2153.
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Description/Abstract
The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spinrelaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 256694 |
| Date Deposited: | 18 Jul 2002 |
| Last Modified: | 15 Aug 2012 03:04 |
| Contributors: | Sandhu, J.S. (Author) Heberle, A.P. (Author) Baumberg, J.J. (Author) Cleaver, J.R.A. (Author) |
| Date: | March 2001 |
| Status: | Published |
| Publisher: | The American Physical Society |
| Further Information: | Google Scholar |
| ISI Citation Count: | 45 |
| URI: | http://eprints.soton.ac.uk/id/eprint/256694 |
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