Visible photonic band gap engineering in silicon nitride waveguides


Netti, M.C., Charlton, M.D.B., Parker, G.J. and Baumberg, J.J. (2000) Visible photonic band gap engineering in silicon nitride waveguides. APPLIED PHYSICS LETTERS, 76, (8), 991-993.

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Description/Abstract

We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were performed using an ultrabroadband high-brightness white light laser continuum, extracting extinction ratios as low as 10–4 in the gap regions. Angle-resolved measurements show the perfect alignment of the gap around the -J direction. © 2000 American Institute of Physics. [S0003-6951(00)02008-8]

Item Type: Article
Related URLs:
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 256715
Date Deposited: 04 Aug 2002
Last Modified: 26 Apr 2013 02:43
Contributors: Netti, M.C. (Author)
Charlton, M.D.B. (Author)
Parker, G.J. (Author)
Baumberg, J.J. (Author)
Date: February 2000
Status: Published
Publisher: American Institute of Physics
Further Information:Google Scholar
ISI Citation Count:46
URI: http://eprints.soton.ac.uk/id/eprint/256715

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