Materials and technology issues for SiGe heterojunction bipolar transistors
Ashburn, P (2002) Materials and technology issues for SiGe heterojunction bipolar transistors. Journal of Materials Science in Semiconductor Processing, 4, (6), 521-527.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 257502 |
| Date Deposited: | 28 May 2003 |
| Last Modified: | 01 Mar 2012 10:52 |
| Contributors: | Ashburn, P (Author) |
| Date: | 2002 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 9 |
| URI: | http://eprints.soton.ac.uk/id/eprint/257502 |
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