Materials and technology issues for SiGe heterojunction bipolar transistors


Ashburn, P (2002) Materials and technology issues for SiGe heterojunction bipolar transistors. Journal of Materials Science in Semiconductor Processing, 4, (6), 521-527.

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Item Type: Article
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 257502
Accepted Date and Publication Date:
Status
2002Published
Date Deposited: 28 May 2003
Last Modified: 31 Mar 2016 13:58
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/257502

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