Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation


Mitchell, MJ, Ashburn, P and Hemment, P L F (2002) Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation. Journal of Applied Physics, 92, (11), 6924-6927.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 257504
Date :
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2002Published
Date Deposited: 22 Dec 2003
Last Modified: 31 Mar 2016 13:58
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/257504

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