Mitchell, MJ, Ashburn, P and Hemment, P L F (2002) Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation. Journal of Applied Physics, 92 (11), 6924-6927.
Record type:
Article
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Published date: 2002
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 257504
URI: http://eprints.soton.ac.uk/id/eprint/257504
ISSN: 0021-8979
PURE UUID: 57c8e2a0-c68d-4623-8875-eb38b56a555e
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Date deposited: 22 Dec 2003
Last modified: 14 Mar 2024 05:58
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