Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation
Mitchell, MJ, Ashburn, P and Hemment, P L F (2002) Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation. Journal of Applied Physics, 92, (11), 6924-6927.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 257504 |
| Date Deposited: | 22 Dec 2003 |
| Last Modified: | 16 Aug 2012 03:24 |
| Contributors: | Mitchell, MJ (Author) Ashburn, P (Author) Hemment, P L F (Author) |
| Date: | 2002 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 2 |
| URI: | http://eprints.soton.ac.uk/id/eprint/257504 |
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