SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10 micro m x 10 micro m Pillars


(2002) SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10 micro m x 10 micro m Pillars. ESSDERC, Florence, Italy, 26 - 24 Sep 2002.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Event Dates: 24-26th September
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 257517
Date Deposited: 29 May 2003
Last Modified: 02 Mar 2012 11:57
Contributors: Straube, U N (Editor)
Waite, A M (Editor)
Lloyd, N S (Editor)
Croucher, S G (Editor)
Tang, Y T (Editor)
Evans, A G R (Editor)
Grasby, T J (Editor)
Myronov, M (Editor)
Whall, T E (Editor)
Parker, E H C (Editor)
Norris, D (Editor)
Cullis, T (Editor)
Date: 2002
Additional Information: Event Dates: 24-26th September
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/257517

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