Investigating 50nm channel length vertical MOSFET's containing a dielectric pocket in a circuit environment
Donaghy, DC, Hall, S, Kunz, VD, Groot, CH de and Ashburn, P (2002) Investigating 50nm channel length vertical MOSFET's containing a dielectric pocket in a circuit environment. ESSDERC 2002, Florence, , 499-502.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 257759 |
| Date Deposited: | 26 Jun 2003 |
| Last Modified: | 02 Mar 2012 12:58 |
| Contributors: | Donaghy, DC (Author) Hall, S (Author) Kunz, VD (Author) Groot, CH de (Author) Ashburn, P (Author) |
| Date: | 2002 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/257759 |
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- Investigating 50nm channel length vertical MOSFET's containing a dielectric pocket in a circuit environment. (deposited 26 Jun 2003) [Currently Displayed]
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