Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
Prest, M J, Palmer, M J, Grasby, T J, Philips, P J, Miranov, O A, Parker, E H C, Whall, T E, Waite, A M, Evans, A G R, Watling, J R, Asenov, A and Barker, J R (2002) Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science and Engineering B, B89, 444-448.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 257801 |
| Date Deposited: | 26 Jun 2003 |
| Last Modified: | 02 Mar 2012 14:02 |
| Contributors: | Prest, M J (Author) Palmer, M J (Author) Grasby, T J (Author) Philips, P J (Author) Miranov, O A (Author) Parker, E H C (Author) Whall, T E (Author) Waite, A M (Author) Evans, A G R (Author) Watling, J R (Author) Asenov, A (Author) Barker, J R (Author) |
| Date: | 2002 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/257801 |
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