Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs


Prest, M J, Palmer, M J, Grasby, T J, Philips, P J, Miranov, O A, Parker, E H C, Whall, T E, Waite, A M, Evans, A G R, Watling, J R, Asenov, A and Barker, J R (2002) Transconductance, carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science and Engineering B, B89, 444-448.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 257801
Date Deposited: 26 Jun 2003
Last Modified: 27 Mar 2014 20:00
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/257801

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