Ion-implantation and diffusion behaviour of boron in germanium
Uppall, Suresh, Willoughby, A F W, Bonar, Janet M, Evans, Alan G R, Cowern, Nick E B, Morris, Richard and Dowsett, Mark G (2001) Ion-implantation and diffusion behaviour of boron in germanium. Physica B, 308, 525-528.
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Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(+/-0.3)x10-16/s at 850 degrees c has been extracted. This value is two orders of magnitude lower than previously reported vaues. The results question the change in diffusion mechanism of B diffusion in Si-Ge alloys from low Ge levels to high Ge levels.
|Keywords:||Germanium, Boron, Ion implantation, Diffusion|
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||26 Jun 2003|
|Last Modified:||02 Mar 2012 11:38|
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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