Ion-implantation and diffusion behaviour of boron in germanium
Uppall, Suresh, Willoughby, A F W, Bonar, Janet M, Evans, Alan G R, Cowern, Nick E B, Morris, Richard and Dowsett, Mark G (2001) Ion-implantation and diffusion behaviour of boron in germanium. Physica B, 308, 525-528.
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Description/Abstract
Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(+/-0.3)x10-16/s at 850 degrees c has been extracted. This value is two orders of magnitude lower than previously reported vaues. The results question the change in diffusion mechanism of B diffusion in Si-Ge alloys from low Ge levels to high Ge levels.
| Item Type: | Article |
|---|---|
| ISSNs: | 0921452601 |
| Keywords: | Germanium, Boron, Ion implantation, Diffusion |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 257856 |
| Date Deposited: | 26 Jun 2003 |
| Last Modified: | 02 Mar 2012 11:38 |
| Contributors: | Uppall, Suresh (Author) Willoughby, A F W (Author) Bonar, Janet M (Author) Evans, Alan G R (Author) Cowern, Nick E B (Author) Morris, Richard (Author) Dowsett, Mark G (Author) |
| Date: | 2001 |
| Status: | Published |
| Publisher: | Elsevier |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/257856 |
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