Ion-implantation and diffusion behaviour of boron in germanium

Uppal, Suresh, Willoughby, A.F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Ion-implantation and diffusion behaviour of boron in germanium. Physica B, 308, 525-528.


Full text not available from this repository.


Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(+/-0.3)x10-16/s at 850 degrees c has been extracted. This value is two orders of magnitude lower than previously reported vaues. The results question the change in diffusion mechanism of B diffusion in Si-Ge alloys from low Ge levels to high Ge levels.

Item Type: Article
ISSNs: 0921452601
Keywords: Germanium, Boron, Ion implantation, Diffusion
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 257856
Date :
Date Event
2001["eprint_fieldopt_dates_date_type_delivered" not defined]
Date Deposited: 26 Jun 2003
Last Modified: 31 Dec 2015 22:42
Further Information:Google Scholar

Actions (login required)

View Item View Item