Diffusion of ion-implanted boron in germanium
Uppall, Surresh, Willoughby, Arthur F W, Bonar, Janet M, Evans, Alan G R, Cowern, Nick E B, Morris, Richard and Dowsett, Mark G (2001) Diffusion of ion-implanted boron in germanium. Journal of Applied Physics, 90, (8), 4293-4295.
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Description/Abstract
The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(+/-0.3)x10-16 cm2/s and 5.5(+/-1.0)x1018/cm3, respectively at 850 degrees c by fitting experimentally obtained profiles. The value of diffusion coeffienc is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.
| Item Type: | Article |
|---|---|
| ISSNs: | 00218979200190 |
| Keywords: | Germanium,Boron,Ion implantation, Diffusion |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 257858 |
| Date Deposited: | 26 Jun 2003 |
| Last Modified: | 02 Mar 2012 12:39 |
| Contributors: | Uppall, Surresh (Author) Willoughby, Arthur F W (Author) Bonar, Janet M (Author) Evans, Alan G R (Author) Cowern, Nick E B (Author) Morris, Richard (Author) Dowsett, Mark G (Author) |
| Date: | October 2001 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/257858 |
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