The University of Southampton
University of Southampton Institutional Repository

Diffusion of ion-implanted boron in germanium

Diffusion of ion-implanted boron in germanium
Diffusion of ion-implanted boron in germanium
The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(±0.3)x10-16 cm2/s and 5.5(±1.0)x1018/cm3, respectively at 850 ºC by fitting experimentally obtained profiles. The value of diffusion coeffient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.
Germanium, Boron, Ion implantation, Diffusion
0021-8979
4293-4295
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, Arthur F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Cowern, Nick E.B.
2aa61e30-cce3-483f-be69-357786c2adfe
Morris, Richard
09dc599c-6848-41f5-a170-7408d4128f05
Dowsett, Mark G.
49e57613-72df-4035-acba-333828cdd2bc
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Willoughby, Arthur F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, Janet M.
20aa810e-3973-4d6e-b957-f8d308a1fbb5
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Cowern, Nick E.B.
2aa61e30-cce3-483f-be69-357786c2adfe
Morris, Richard
09dc599c-6848-41f5-a170-7408d4128f05
Dowsett, Mark G.
49e57613-72df-4035-acba-333828cdd2bc

Uppal, Suresh, Willoughby, Arthur F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Diffusion of ion-implanted boron in germanium. Journal of Applied Physics, 90 (8), 4293-4295. (doi:10.1063/1.1402664).

Record type: Article

Abstract

The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(±0.3)x10-16 cm2/s and 5.5(±1.0)x1018/cm3, respectively at 850 ºC by fitting experimentally obtained profiles. The value of diffusion coeffient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.

This record has no associated files available for download.

More information

Published date: October 2001
Keywords: Germanium, Boron, Ion implantation, Diffusion

Identifiers

Local EPrints ID: 257858
URI: http://eprints.soton.ac.uk/id/eprint/257858
ISSN: 0021-8979
PURE UUID: 53bd12e1-75f1-4aa7-ba5d-3474754e731e

Catalogue record

Date deposited: 26 Jun 2003
Last modified: 14 Mar 2024 06:03

Export record

Altmetrics

Contributors

Author: Suresh Uppal
Author: Arthur F.W. Willoughby
Author: Janet M. Bonar
Author: Alan G.R. Evans
Author: Nick E.B. Cowern
Author: Richard Morris
Author: Mark G. Dowsett

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×