SiGe Heterojunction Bipolar Transistors
Ashburn, P (2003) SiGe Heterojunction Bipolar Transistors, John Wiley & Sons
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Description/Abstract
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium heterojunction bipolar transistor emerge from research labs to enter production in radio frequency technologies. These developments have allowed SiGe BiCMOS transistors to address high frequency wireless and optical communications applications that were previously only possible in III/V and II/VI devices. This book brings together for the first time all the new developments and describes in a unified manner the physics, materials science and technology of silicon bipolar transistors and SiGe heterojunction bipolar transistors.
| Item Type: | Book |
|---|---|
| ISBNs: | 0470848383 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 258612 |
| Date Deposited: | 06 Jan 2004 |
| Last Modified: | 01 Mar 2012 10:56 |
| Contributors: | Ashburn, P (Author) |
| Date: | 2003 |
| Status: | Published |
| Publisher: | John Wiley & Sons |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/258612 |
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