Fabrication and characterization of n-Zn0/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
Alivov, Ya I, Kalinina, E V, Cherenkov, A E, Look, D C, Ataev, B M, Omaev, A K, Chukichev, M V Chukichev and Bagnall, D M (2003) Fabrication and characterization of n-Zn0/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Applied Physics Letters, 83, (23), 4719-4721.
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Description/Abstract
We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I-V characteristics, with threshold voltage ~3.2V and low reverse leakage current ~10-7A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 mn is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500K and shown to originate from recombination within the ZnO.
| Item Type: | Article |
|---|---|
| ISSN: | 0003-695120038347193 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| ePrint ID: | 258667 |
| Deposited On: | 10 Dec 2003 |
| Last Modified: | 02 Mar 2012 12:39 |
| Further Information: | Google Scholar |
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